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| 2SC3831 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor) sAbsolute maximum ratings (Ta=25C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3831 600 500 10 10(Pulse20) 4 100(Tc=25C) 150 -55 to +150 Unit V V V A A W C C Application : Switching Regulator and General Purpose sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=600V VEB=10V IC=25mA VCE=4V, IC=5A IC=5A, IB=1A IC=5A, IB=1A VCE=12V, IE=-1A VCB=10V, f=1MHz 1max 100max 500min 10 to 30 0.5max 1 . 3 max 8typ 105typ (Ta=25C) 2SC3831 Unit External Dimensions MT-100(TO3P) 5.00.2 15.60.4 9.6 2.0 1.8 4.80.2 2.00.1 mA A 4.0 V V MHz pF 19.90.3 a b o3.20.1 20.0min 4.0max V 2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4 sTypical Switching Characteristics (Common Emitter) VCC (V) 200 RL () 40 IC (A) 5 VBB1 (V) 10 VBB2 (V) -5 IB1 (A) 0.5 IB2 (A) -1.0 ton (s) 1max tstg (s) 4.5max tf (s) 0.5max 5.450.1 B C E 5.450.1 Weight : Approx 6.0g a. Type No. b. Lot No. IC - VCE Characteristics (Typical) 10 A .2 1A VCE(sat),VBE(sat) - IC Temperature Characteristics (Typical) (IC/I B= 5) Collector-Emitter Saturation Voltage V CE(s a t)( V ) Base-Emitter Saturation Voltage V B E (sa t)( V ) IC - V BE Temperature Characteristics (Typical) 10 (VCE=4V) =1 800 mA VBE(sat) 1 -55C (Cas 25C (C Collector Current I C (A) e Temp) p) ) ) mp 6 400 mA ase Tem Collector Current I C (A) 8 IB 60 0m A 8 6 p) Tem Te (Ca se 4 4 C (Cas 25C e Te 200mA (C a 125 C 100mA 2 12 C 5 25 2 C V C E( sat) 0 0.02 0.05 0.1 0.5 1 5 -5 0 0 1 2 3 4 5 10 0 0 0.2 0.4 0.6 0.8 -55C (Case se Temp 125C (Case mp) ) Temp 1.0 1.2 Collector-Emitter Voltage V C E( V) Collector Current I C( A) Base-Emittor Voltage V B E( V) (VCE=4V) 50 125C j- a( C/W) hFE - IC Characteristics (Typical) 10 t on *t stg * tf - I C Characteristics (Typical) t on*t s t g *t f( s) j-a - t Characteristics 2 DC Cur rent Gain h F E 25C -5 5C Transient Thermal Resistance 5 VCC 200V I C: I B1: I B2= 10:1:-2 1 0.5 ton t s tg 1 10 Switching T im e 0.5 tf 0.1 0.2 0.5 1 Collector Current I C( A) 5 10 5 0.02 0.05 0.1 0.5 1 5 10 0.1 1 10 Time t(ms) 100 1000 Collector Current I C( A) Safe Operating Area (Single Pulse) 30 1m 10 10 0 s Reverse Bias Safe Operating Area 30 100 P c - T a Derating 5 Collect or Curr ent I C( A) D C 5 Collector Curr ent I C ( A) M aximum Power Dissipa ti on P C( W) 10 s 10 W ms ith In fin ite 1 0.5 1 0.5 Without Heatsink Natural Cooling L=3mH I B 2 =-0.5A Duty:less than 1% he 50 at si nk 0.1 0.05 Without Heatsink Natural Cooling 1 0.05 0.01 50 0.02 8 10 50 100 500 600 100 Collector-Emitter Voltage V C E( V) 500 600 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Collector-Emitter Voltage V C E( V) Ambient Temperature Ta(C) 71 |
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